Title :
A 0.8V ΔΣ modulator using DTMOS technique
Author :
Maymandi-Nejad, Mohammad ; Sachdev, Manoj
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
A 0.8V second order ΔΣ modulator is designed in 0.18 μm bulk CMOS technology. The dynamic threshold MOSFET (DTMOS) technique is used to enhance the performance of the circuit building blocks at very low supply voltage. Schematic and post layout simulation results are provided. In case of the amplifier with the embedded CMFB, the measurement results are presented. The modulator can achieve a SNR of approximately 80dB with an oversampling ratio (OSR) of 200 and consumes a power of 460 μW.
Keywords :
CMOS integrated circuits; amplifiers; delta-sigma modulation; sampling methods; 0.18 micron; 0.8 V; 460 muW; DTMOS technique; amplifier; bulk CMOS technology; circuit building blocks; delta sigma modulator; dynamic threshold MOSFET; low supply voltage; oversampling ratio; performance; Batteries; Biomedical measurements; CMOS technology; Circuit simulation; Low voltage; MIM capacitors; MOS capacitors; MOSFETs; Switches; Turning;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465429
