DocumentCode :
3546753
Title :
Evaluation of anodic TA2O5 as the dielectric layer for EWOD devices
Author :
Huang, Lian-Xin ; Koo, Bonhye ; Kim, Chang-Jin CJ
Author_Institution :
Univ. of California, Los Angeles, CA, USA
fYear :
2012
fDate :
Jan. 29 2012-Feb. 2 2012
Firstpage :
428
Lastpage :
431
Abstract :
We report that anodic tantalum pentoxide (Ta2O5) exhibits severe polarity and frequency dependencies that, when used as the dielectric material for electrowetting on dielectric (EWOD) devices, in many cases result in long-term performance that is worse than when conventional dielectrics (e.g., SiO2) are used. This rather disappointing news is nevertheless relevant to the community and calls for critical assessment. Here, we find that under direct current (DC) actuation Ta2O5 is attractive for EWOD only if the droplet is negatively biased, and that under alternating current (AC) it is acceptable only for low frequencies.
Keywords :
anodisation; dielectric materials; EWOD devices; SiO2; Ta2O5; anodic tantalum pentoxide; dielectric device; dielectric layer; dielectric material; direct current actuation; electrowetting; frequency dependency; severe polarity; Dielectric constant; Electrochemical processes; Films; Micromechanical devices; Performance evaluation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
ISSN :
1084-6999
Print_ISBN :
978-1-4673-0324-8
Type :
conf
DOI :
10.1109/MEMSYS.2012.6170218
Filename :
6170218
Link To Document :
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