Lorentz force MOS transistor

Author

Gabara, Thaddeus

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

7-10 Sep 1997

Firstpage

291

Lastpage

294

Abstract

A new set of terminals has been introduced to control the behavior of an MOS device. A magnetic field, formed when current flows through an on-chip coil, is applied to the inversion layer of an MOS device. The generated Lorentz force is applied to the carriers in the inversion layer to alter the characteristics of the MOS device. The magnetic field is applied parallel to the inversion layer and perpendicular to the carrier flow. Measurement results using this structure as a 1.8 GHz mixer are given. Measurements demonstrate that the interaction between the coil and the MOS device is primarily due to the Lorentz force. The capacitive coupling effect between the coil and the device plays a minor role

Keywords

Hall effect devices; MOSFET; UHF mixers; coils; inductors; inversion layers; 1.8 GHz; Hall effect device; Lorentz force; MOS transistor; capacitive coupling effect; coil; inversion layer; magnetic field; mixer; on-chip inductors; Coils; Frequency; Inductors; Lorentz covariance; MOS devices; MOSFETs; Magnetic field measurement; Magnetic fields; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC Conference and Exhibit, 1997. Proceedings., Tenth Annual IEEE International

Conference_Location

Portland, OR

ISSN

1063-0988

Print_ISBN

0-7803-4283-6

Type

conf

DOI

10.1109/ASIC.1997.617024

Filename

617024