A CMOS bandgap voltage reference with absolute value and temperature drift trims

Author

Spady, David ; Ivanov, Vadim

Author_Institution

Texas Instruments, Inc., Tucson, AZ, USA

fYear

2005

fDate

23-26 May 2005

Firstpage

3853

Abstract

We present a curvature-corrected CMOS bandgap voltage reference with in-package trim of the absolute value and first-order temperature drift during the final test. The trim settings are stored using a poly fuse ROM. The output buffer has a single-stage topology with voltage and current gain boosts, providing 20 μV/mA load regulation and frequency stability with any load. The total error of the voltage reference, implemented in the TSMC 0.6 μm process, does not exceed 200 ppm in the full temperature (-40°C to 125°C), supply (1.8 V to 5.5 V) and load (±10 mA) range.

Keywords

CMOS integrated circuits; buffer circuits; circuit tuning; frequency stability; network topology; read-only storage; voltage regulators; -40 to 125 degC; 0.6 micron; 1.8 to 5.5 V; CMOS bandgap voltage reference; TSMC process; absolute value; current gain boost; curvature-corrected voltage reference; frequency stability; in-package trim; load regulation; output buffer; poly fuse ROM; single-stage topology; temperature drift trims; voltage gain boost; Circuits; Frequency; Fuses; Packaging; Photonic band gap; Read only memory; Temperature distribution; Testing; Topology; Voltage; bandgap; curvature correction; temperature drift; voltage reference;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465471

Filename

1465471