Title :
A single circuit solution for voltage sensors
Author :
Prasad, S.S. ; Mandal, Pradip
Author_Institution :
Alliance Semicond. (India) Pvt. Ltd., Bangalore, India
Abstract :
A single circuit solution using MOSFET alone, has been presented for a voltage sensor. The circuit was implemented in a 0.18 μm process for an SRAM application. It was designed to have low temperature sensitivity and good process tuning capability. Experimental results on silicon provided a temperature performance of 435ppm/°C on the virgin die without trimming.
Keywords :
MOS integrated circuits; SRAM chips; electric sensing devices; voltage regulators; 0.18 micron; MOSFET; SRAM application; performance; process tuning; silicon; single circuit solution; temperature sensitivity; voltage sensors; Circuits; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465474
