Title :
Design considerations in bandgap references over process variations
Author :
Sengupta, S. ; Carastro, L. ; Allen, P.E.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this paper, simple expressions to compute the error in the reference voltage of a bandgap reference (BGR) circuit over process variations are developed. They are used to compare the performance of two popular BGR topologies, and it is shown that even though both of them achieve identical temperature compensation, one of them is more vulnerable to process variations. Further, it is shown that some errors can be reduced by decreasing the resistor ratio at the expense of increase in the area of the bipolar transistors.
Keywords :
CMOS integrated circuits; bipolar transistors; circuit simulation; compensation; energy gap; error analysis; network topology; reference circuits; BGR topologies; CMOS process simulation; bandgap reference circuit; bipolar transistor area; design considerations; process variations; reference voltage error; resistor ratio; temperature compensation; Battery powered vehicles; Bipolar transistors; Circuit simulation; Circuit topology; Doping; Photonic band gap; Resistors; Stress; Temperature; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465475
