Title :
Shear force detector using piezo-resistive beams with sidewall-doping
Author :
Takahashi, H. ; Nakai, A. ; Matsumoto, K. ; Shimoyama, I.
Author_Institution :
Inf. & Robot Technol. Res. Initiative, Univ. of Tokyo, Tokyo, Japan
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm × 15 μm × 20 μm (length × width × thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.
Keywords :
force measurement; force sensors; piezoresistive devices; silicon-on-insulator; SOI wafer; embedded elastic body; piezoresistive beam; shear force detector; shear force measurement; sidewall extension-compression; sidewall-doping; silicon on insulator wafer; triaxial tactile sensor; Detectors; Force; Immune system; Sensor phenomena and characterization; Stress; Tactile sensors;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170259
