DocumentCode
3546908
Title
Shear force detector using piezo-resistive beams with sidewall-doping
Author
Takahashi, H. ; Nakai, A. ; Matsumoto, K. ; Shimoyama, I.
Author_Institution
Inf. & Robot Technol. Res. Initiative, Univ. of Tokyo, Tokyo, Japan
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
599
Lastpage
602
Abstract
This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm × 15 μm × 20 μm (length × width × thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.
Keywords
force measurement; force sensors; piezoresistive devices; silicon-on-insulator; SOI wafer; embedded elastic body; piezoresistive beam; shear force detector; shear force measurement; sidewall extension-compression; sidewall-doping; silicon on insulator wafer; triaxial tactile sensor; Detectors; Force; Immune system; Sensor phenomena and characterization; Stress; Tactile sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170259
Filename
6170259
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