DocumentCode
3546988
Title
An inverted-gap analog tuning RF-MEMS capacitor with 250 milliwatts power handling capability
Author
Barrière, F. ; Passerieux, D. ; Mardivirin, D. ; Pothier, A. ; Blondy, P.
Author_Institution
XLIM, Limoges, France
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
676
Lastpage
679
Abstract
A novel analog tuning MEMS variable capacitor is presented. By using an inverted-gap configuration, the mechanical effects of large RF-signals can be cancelled. Fabricated devices could handle 250 mW of power, with measured 2.2:1 capacitance variation, very high Q, and extremely low parasitic series inductance up to 10 GHz.
Keywords
capacitance; inductance; low-power electronics; micromechanical devices; varactors; RF-signals; analog tuning MEMS variable capacitor; capacitance variation; inverted-gap analog tuning RF-MEMS capacitor; low parasitic series inductance; power 250 mW; power handling capability; Micromechanical devices; Microwave theory and techniques; Radio frequency; Silicon compounds; Substrates; Varactors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170277
Filename
6170277
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