Title : 
Modeling analysis and equivalent circuit realization of a flux-controlled memristor
         
        
            Author : 
Duo Xu ; Bocheng Bao
         
        
            Author_Institution : 
Sch. of Inf. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
         
        
        
        
        
        
        
            Abstract : 
A new flux-controlled memristor model and its corresponding equivalent circuit are presented in this paper. The new memristor with a sinusoidal voltage stimulus typically has pinched hysteresis loop characteristics. Based on the equivalent circuit, the corresponding circuit simulations and experimental observations verify the theoretical results and shows that the proposed equivalent circuit does realize a flux-controlled memristor.
         
        
            Keywords : 
circuit simulation; equivalent circuits; magnetic flux; memristors; circuit simulations; equivalent circuit; flux-controlled memristor model; pinched hysteresis loop characteristics; sinusoidal voltage stimulus; Circuit simulation; Educational institutions; Equivalent circuits; Integrated circuit modeling; Memristors; Time-domain analysis; Video recording;
         
        
        
        
            Conference_Titel : 
Communications, Circuits and Systems (ICCCAS), 2013 International Conference on
         
        
            Conference_Location : 
Chengdu
         
        
            Print_ISBN : 
978-1-4799-3050-0
         
        
        
            DOI : 
10.1109/ICCCAS.2013.6765391