Title :
Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes
Author :
Lin, Chih-Ming ; Chen, Yung-Yu ; Felmetsger, Valery V. ; Vigevani, Gabriele ; Senesky, Debbie G. ; Pisano, Albert P.
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Berkeley, CA, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
In this study, we present a composite plate composed of an aluminum nitride thin film and an epitaxial cubic silicon carbide layer has the remarkable capability to enable Lamb wave resonators with a high series resonance frequency (fs) and a high quality factor (Q) simultaneously. The epitaxial cubic silicon carbide layer not only provides the Lamb wave resonator with a low acoustic loss layer to boost the Q´s but also enhances the electromechanical couplings of the high-order Lamb wave modes in the composite plate. Specifically, a micromachined acoustic resonator utilizing the third quasi-symmetric (QS3) Lamb wave mode exhibits a Q of 5510 at 2.92 GHz, resulting in the highest fs·Q product, 1.61×1013 Hz, among suspended piezoelectric thin film resonators to date.
Keywords :
Q-factor; aluminium compounds; micromachining; micromechanical resonators; piezoelectric thin films; semiconductor epitaxial layers; silicon compounds; surface acoustic wave resonators; AlN; Lamb wave resonators; SiC; aluminum nitride thin film; composite plate; electromechanical couplings; epitaxial cubic silicon carbide layer; frequency 2.92 GHz; high quality factor; high series resonance frequency; high-order Lamb wave modes; low acoustic loss layer; micromachined aluminum nitride acoustic resonators; quasisymmetric Lamb; suspended piezoelectric thin film resonators; Acoustics; Admittance; Electrodes; Epitaxial growth; Resonant frequency; Silicon; Silicon carbide;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170290