Title :
Thermally actuated I-shaped electromechanical VHF resonators
Author :
Hall, H.J. ; Rahafrooz, A. ; Brown, J.J. ; Bright, V.M. ; Pourkamali, S.
Author_Institution :
Univ. of Colorado at Boulder, Boulder, CO, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
Fabrication and characterization results are presented for the highest frequency (112-176 MHz) and smallest footprint (area: ~70 μm2) thermal-piezoresistive single crystal silicon (SCS) resonators yet reported. The devices in this work have similar I-shaped or dumbbell geometry as previous work but with considerably smaller dimensions. An SOIMEMS fabrication process was developed that employs electron beam lithography to achieve submicron dimensions. Strong performance (Q = 5750, gm = 89.6 μA/V) is demonstrated, as is frequency tunability (up to 3.6% in vacuum) via DC bias current adjustment. Simple geometry and fabrication make these devices useful alternatives to capacitive and piezoelectric resonators.
Keywords :
crystal resonators; piezoresistive devices; resonators; silicon; DC bias current adjustment; SOIMEMS fabrication process; Si; capacitive resonators; dumbbell geometry; electron beam lithography; frequency 112 MHz to 176 MHz; piezoelectric resonators; thermal-piezoresistive single crystal silicon resonators; thermally actuated I-shaped electromechanical VHF resonators; Actuators; Current measurement; Fabrication; Performance evaluation; Piezoresistance; Resonant frequency; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170291
