• DocumentCode
    3547114
  • Title

    Integrated fluorescent analysis system with monolithic GaN light emitting diode on Si platform

  • Author

    Nakazato, H. ; Kawaguchi, H. ; Iwabuchi, A. ; Hane, K.

  • Author_Institution
    Tohoku Univ., Sendai, Japan
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    842
  • Lastpage
    845
  • Abstract
    A GaN blue light emitting diode (LED) integrated monolithically on a Si substrate is used as a fluorescent light source of bio-fluidic micro total analysis system (μTAS) with polydimethylsiloxane (PDMS) channel. A Si photodiode (Si PD) is also installed on a Si substrate for fluorescent detection. Therefore, all basic optical components necessary for fluorescent μTAS are integrated on a Si platform. A GaN LED layer on a Si substrate is micromachined by etching the Si substrate to generate a ring-shaped light source for a dark-illumination optical configuration. The blue emission at the wavelength of 477nm suits the excitation of the fluorescent dye of fluorescein isothiocyanate (FITC). Using the integrated chip, the fluorescent emission form a flowing fluid with the dye is measured as a function of the concentration. The noise, sensitivity and detection limit are evaluated to be 0.57pA, 1.21pA/μM and 469nM, respectively.
  • Keywords
    biological techniques; etching; fluorescence spectroscopy; lab-on-a-chip; light emitting diodes; light sources; microfluidics; micromachining; μTAS; FITC; GaN-Si; LED; PDMS; biofluidic micro total analysis system; dark illumination optical configuration; etching; fluorescein isothiocyanate; fluorescent dye; fluorescent light source; integrated chip; integrated fluorescent analysis system; micromachining; monolithic light emitting diode; polydimethylsiloxane channel; ring shaped light source; Fluorescence; Gallium nitride; Light emitting diodes; Photodiodes; Sensitivity; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170317
  • Filename
    6170317