High-sensitivity capacitive readout system for resonant submicrometer-scale cantilevers based sensors

Author

Verd, Jaume ; Abadal, Gabriel ; Teva, Jordi ; Uranga, Arantxa ; Barniol, Núria ; Esteve, Jaume ; Duch, Marta ; Pérez-Murano, Francesc

Author_Institution

Dept. Enginyeria Electronica, Univ. Autonoma de Barcelona, Bellaterra, Spain

fYear

2005

fDate

23-26 May 2005

Firstpage

4209

Abstract

We present a capacitive readout system used to detect the oscillation of a submicrometer-scale cantilever integrated monolithically in a 3.3 V, 0.35 μm CMOS standard technology from AMS. This readout system presents a total parasitic capacitance at the sense node as low as 11 fF. This parasitic capacitance is used to integrate the current generated by the cantilever-driver system that is electrostatically excited, resulting on a high-sensitivity readout system of 542×10³ V/m with a BW of 47 MHz (@30 pF).

Keywords

CMOS analogue integrated circuits; capacitive sensors; displacement measurement; integrating circuits; micromechanical resonators; microsensors; readout electronics; 0.35 micron; 11 fF; 3.3 V; 30 pF; 47 MHz; CMOS standard technology; electrostatic excitation; high-sensitivity capacitive readout system; mechanical transducer; parasitic capacitance; resonant submicrometer-scale cantilevers; sensors; structure displacement detection; AC generators; Capacitive sensors; Circuits; Frequency; Motion detection; Nanoelectromechanical systems; Parasitic capacitance; Resonance; Sensor systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465559

Filename

1465559