Title :
Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode
Author :
Sano, Ko ; Murata, Kentaro ; Akeyoshi, T. ; Shimizu, N. ; Otsuji, Taiichi ; Osaka, J. ; Sano, Eiichi
Author_Institution :
NTT Opt. Network Syst. Labs., Atsugi, Japan
Abstract :
Summary form only given. A 100-Gbit/s class optical receiver will be required in near-future transmission systems. For realizing such high-speed receivers, an ultrafast electronic device and a wideband photodetector are needed. Resonant-tunneling diodes (RTDs) can offer a switching time of less than a few picoseconds. A new type of wideband photodetector, called unitraveling-carrier photodiode (UTC-PD), has a 150-GHz bandwidth and high saturation power. In this paper, we propose an ultrafast optoelectronic time-division demultiplexer IC using only two RTDs and one UTC-PD. The circuit fabricated monolithically demultiplexed an 80-Gbit/s optical signal into a 40-Gbit/s electrical signal with a power consumption of 7.75 mW.
Keywords :
demultiplexing equipment; integrated optoelectronics; optical receivers; photodetectors; photodiodes; resonant tunnelling diodes; very high speed integrated circuits; 40 Gbit/s; 7.75 mW; 80 Gbit/s; cascaded RTD; high saturation power; high-speed receivers; monolithically fabricated circuit; optical receiver; power consumption; resonant tunneling diodes; ultrafast optoelectronic time-division demultiplexer IC; unitraveling-carrier photodiode; wideband photodetector; Bandwidth; Circuits; Diodes; High speed optical techniques; Optical receivers; Photodetectors; Photodiodes; Resonant tunneling devices; Ultra wideband technology; Ultrafast electronics;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676545