Title :
A new 4.3 ppm/°C voltage reference using standard CMOS process with 1V supply voltage
Author :
Zhang, Q.-X. ; Siek, L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A new 1 V supply voltage reference, using a standard CMOS process, with threshold voltage close to the supply voltage is proposed. The threshold voltages of NMOS and PMOS are 0.81 V and -1.05 V respectively at a temperature of -25°C. Simulation results show that the proposed design can achieve below 4.3 ppm/°C between -25°C and 150°C at supply voltage of 1 V; as the supply voltage increases to 2 V, the temperature coefficient only increases to 9.3 ppm/°C.
Keywords :
CMOS integrated circuits; electric potential; integrated circuit design; reference circuits; -1.05 V; -25 to 150 C; 0.81 V; 1 to 2 V; NMOS; PMOS; standard CMOS process; supply voltage; threshold voltage; voltage reference; CMOS integrated circuits; CMOS process; CMOS technology; Circuit simulation; Integrated circuit technology; Low voltage; MOS devices; MOSFETs; Temperature; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465569
