• DocumentCode
    3547198
  • Title

    A sub-1V bandgap reference circuit using subthreshold current

  • Author

    Lin, Hongchin ; Liang, Chao-Jui

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    4253
  • Abstract
    A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction of VBE is utilized to generate the reference voltage of 170 mV. Since the subthreshold current of MOSFET is used as the current source, the circuit only consumes 2.4 μW at supply voltage of 1V. It was fabricated using 0.18 μm CMOS triple-well technology on chip area of 0.029 mm2. Both the measurement and the simulation demonstrate the reference voltage variation is 1.3mV from -20°C to 100°C and is 1.1mV per volt for supply voltage from 0.95V to 2.5V.
  • Keywords
    CMOS integrated circuits; reference circuits; -20 to 100 degC; 0.18 micron; 0.95 to 2.5 V; 170 mV; 2.4 muW; CMOS triple-well technology; MOSFET; sub-1V bandgap reference circuit; subthreshold current; CMOS technology; Chaos; Circuit simulation; Low voltage; Photonic band gap; Random access memory; Semiconductor device measurement; Subthreshold current; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465570
  • Filename
    1465570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3547198