Title :
A sub-1V bandgap reference circuit using subthreshold current
Author :
Lin, Hongchin ; Liang, Chao-Jui
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Abstract :
A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction of VBE is utilized to generate the reference voltage of 170 mV. Since the subthreshold current of MOSFET is used as the current source, the circuit only consumes 2.4 μW at supply voltage of 1V. It was fabricated using 0.18 μm CMOS triple-well technology on chip area of 0.029 mm2. Both the measurement and the simulation demonstrate the reference voltage variation is 1.3mV from -20°C to 100°C and is 1.1mV per volt for supply voltage from 0.95V to 2.5V.
Keywords :
CMOS integrated circuits; reference circuits; -20 to 100 degC; 0.18 micron; 0.95 to 2.5 V; 170 mV; 2.4 muW; CMOS triple-well technology; MOSFET; sub-1V bandgap reference circuit; subthreshold current; CMOS technology; Chaos; Circuit simulation; Low voltage; Photonic band gap; Random access memory; Semiconductor device measurement; Subthreshold current; Temperature; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465570
