DocumentCode
3547256
Title
Low voltage and low power design of microwave mixer
Author
Allamando, E. ; Gosse, L. Picheta E
Author_Institution
Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fYear
1997
fDate
7-10 Sep 1997
Firstpage
352
Lastpage
355
Abstract
K-band mixers are realised on GaAs MMIC technology by employing cold FET devices. With this submicrometer device, two configurations are studied and realized: the “series” and the “shunt”. Experimental results are compared to theoretical predictions obtained on microwave nonlinear simulator by using an original modelling of the cold FET
Keywords
III-V semiconductors; MMIC mixers; circuit analysis computing; field effect MMIC; gallium arsenide; integrated circuit design; GaAs; K-band mixers; MMIC technology; cold FET device; low power design; microwave mixer; microwave nonlinear simulator; series configuration; shunt configuration; submicrometer device; Gallium arsenide; K-band; Low voltage; MMICs; Microwave FETs; Microwave devices; Microwave technology; Predictive models; Radio frequency; Shunt (electrical);
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC Conference and Exhibit, 1997. Proceedings., Tenth Annual IEEE International
Conference_Location
Portland, OR
ISSN
1063-0988
Print_ISBN
0-7803-4283-6
Type
conf
DOI
10.1109/ASIC.1997.617036
Filename
617036
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