Title :
Low voltage and low power design of microwave mixer
Author :
Allamando, E. ; Gosse, L. Picheta E
Author_Institution :
Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Abstract :
K-band mixers are realised on GaAs MMIC technology by employing cold FET devices. With this submicrometer device, two configurations are studied and realized: the “series” and the “shunt”. Experimental results are compared to theoretical predictions obtained on microwave nonlinear simulator by using an original modelling of the cold FET
Keywords :
III-V semiconductors; MMIC mixers; circuit analysis computing; field effect MMIC; gallium arsenide; integrated circuit design; GaAs; K-band mixers; MMIC technology; cold FET device; low power design; microwave mixer; microwave nonlinear simulator; series configuration; shunt configuration; submicrometer device; Gallium arsenide; K-band; Low voltage; MMICs; Microwave FETs; Microwave devices; Microwave technology; Predictive models; Radio frequency; Shunt (electrical);
Conference_Titel :
ASIC Conference and Exhibit, 1997. Proceedings., Tenth Annual IEEE International
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-4283-6
DOI :
10.1109/ASIC.1997.617036
