Title :
High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector
Author :
Yi-Jen Chiu ; Fleischer, S.B. ; Bowers, J.E. ; Gossard, A.C. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. We successfully fabricated a p-i-n traveling-wave photodetector (TWPD) with low-temperature-grown GaAs (LTG-GaAs) as the absorption layer. The results show the device performance can be improved by taking advantage of both the short carrier lifetime in the LTG-GaAs and the TWPD structure. Furthermore, we investigated saturation effects in the LTG-GaAs TWPD detector under high optical excitation using electro-optic sampling. We believe that defect saturation and field screening effects are the main factors determining the saturation energy for higher optical pulse energies.
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; p-i-n photodiodes; photodetectors; GaAs; absorption layer; defect saturation; device performance; electro-optic sampling; field screening effects; high optical excitation; high-power; high-speed; low-temperature-grown; p-i-n TW photodetector; pump-probe sampling; saturation energy; short carrier lifetime; Absorption; Charge carrier lifetime; Gallium arsenide; High speed optical techniques; Optical detectors; Optical pulses; Optical saturation; PIN photodiodes; Photodetectors; Sampling methods;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676548
