Title :
High-speed metal-semiconductor-metal photodetector formed by silicon trenches
Author :
Ho, Jacob Y. L. ; Wong, Kenaz S.
Author_Institution :
Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
Summary form only given. In summary, we have demonstrated a brand new structure of metal semiconductor metal (MSM) photodetector with 0.15 A/W responsivity at 790-nm wavelength and 2.15-GHz bandwidth at 10-V bias. Compared with conventional planar silicon MSM-PD, this detector was shown to have superior high-speed response and have comparable responsivity with only a simple modification.
Keywords :
high-speed optical techniques; integrated optics; metal-semiconductor-metal structures; optical receivers; photodetectors; silicon; 2 V; 2.15 GHz; 790 nm; GHz bandwidth; MSM photodetector; Si; high-speed metal-semiconductor-metal photodetector; high-speed response; nm wavelength; responsivity; silicon trenches; Bandwidth; Detectors; High speed optical techniques; Jacobian matrices; Optical pulses; Photodetectors; Physics; Pulse measurements; Silicon; Space vector pulse width modulation;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
