Title : 
Experimental estimation of cooling power of a solid state micro magnetic refrigerator using La(FexSi1−x)13Hy
         
        
            Author : 
Tsukamoto, T. ; Esashi, M. ; Tanaka, S.
         
        
            Author_Institution : 
Dept. of Nanomech., Tohoku Univ., Sendai, Japan
         
        
        
            fDate : 
Jan. 29 2012-Feb. 2 2012
         
        
        
        
            Abstract : 
We demonstrated microscale cooling by a solid state micro magnetic refrigerator (SSMMR). The SSMMR consists of thermally isolated magnetic material (La(FexSi1-x)13Hy), two thermal switches and a magnetic field switch. Thermal isolation structure and thermal switch were fabricated using MEMS fabrication process. The magnetic field switch were designed and fabricated to change the magnetic flux density between 0 T and 1 T. Under this magnitude of magnetic field modulation, the La(FexSi1-x)13Hy showed a temperature change of ca. 1 °C. By the refrigeration cycle, about 0.6 °C cooling effect was observed on the thermally isolated cold plate. From these results, the estimated cooling power of the SSMMR was ca. 9 μW.
         
        
            Keywords : 
lanthanum compounds; magnetic cooling; magnetic fields; magnetic switching; microfabrication; micromagnetics; micromechanical devices; refrigeration; refrigerators; (La(FexSi1-x)13Hy); MEMS fabrication process; SSMMR; cooling effect; cooling power estimation; magnetic field modulation magnitude; magnetic field switch; magnetic flux density; magnetic flux density 0 T to 1 T; microscale cooling; power 9 muW; solid state micro magnetic refrigerator; temperature 1 degC; thermal isolation structure; thermal switch; thermally isolated cold plate; thermally isolated magnetic material; Cooling; Heating; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetic materials; Temperature measurement;
         
        
        
        
            Conference_Titel : 
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
         
        
            Conference_Location : 
Paris
         
        
        
            Print_ISBN : 
978-1-4673-0324-8
         
        
        
            DOI : 
10.1109/MEMSYS.2012.6170410