DocumentCode :
3547476
Title :
Analysis of power consumption in VLSI global interconnects
Author :
Shin, Youngsoo ; Kim, Hyung-Ock
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
4713
Abstract :
The analysis of effects induced by interconnects become increasingly important as the scale of process technologies steadily shrinks. While most analyses focus on the timing aspects of interconnects, power consumption is also important. We study the trends of interconnect power consumption based on current and future technology node parameters. We show that 20%-30% of the power is consumed by interconnect resistance in optimally buffered global interconnect systems. We also study the analysis method based on a reduced-order model. The relation between power consumption and the poles and residues of a transfer function is addressed. The theoretical results can be used for any kind of linear circuit, including RLC circuits.
Keywords :
CMOS integrated circuits; RLC circuits; VLSI; integrated circuit interconnections; integrated circuit modelling; poles and zeros; reduced order systems; transfer functions; CMOS power consumption; RLC circuits; VLSI global interconnects; interconnect power analysis; interconnect resistance; linear circuits; optimally buffered global interconnect systems; power distribution analysis; reduced-order model; transfer function poles; transfer function residues; Energy consumption; Integrated circuit interconnections; Power distribution; Power system interconnection; Power system modeling; RLC circuits; Reduced order systems; Semiconductor device modeling; Transfer functions; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1465685
Filename :
1465685
Link To Document :
بازگشت