• DocumentCode
    3547476
  • Title

    Analysis of power consumption in VLSI global interconnects

  • Author

    Shin, Youngsoo ; Kim, Hyung-Ock

  • Author_Institution
    Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    4713
  • Abstract
    The analysis of effects induced by interconnects become increasingly important as the scale of process technologies steadily shrinks. While most analyses focus on the timing aspects of interconnects, power consumption is also important. We study the trends of interconnect power consumption based on current and future technology node parameters. We show that 20%-30% of the power is consumed by interconnect resistance in optimally buffered global interconnect systems. We also study the analysis method based on a reduced-order model. The relation between power consumption and the poles and residues of a transfer function is addressed. The theoretical results can be used for any kind of linear circuit, including RLC circuits.
  • Keywords
    CMOS integrated circuits; RLC circuits; VLSI; integrated circuit interconnections; integrated circuit modelling; poles and zeros; reduced order systems; transfer functions; CMOS power consumption; RLC circuits; VLSI global interconnects; interconnect power analysis; interconnect resistance; linear circuits; optimally buffered global interconnect systems; power distribution analysis; reduced-order model; transfer function poles; transfer function residues; Energy consumption; Integrated circuit interconnections; Power distribution; Power system interconnection; Power system modeling; RLC circuits; Reduced order systems; Semiconductor device modeling; Transfer functions; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465685
  • Filename
    1465685