Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

Author

Pronko, P.P. ; Van Rompay, P.A. ; Horvath, C. ; Liu, X. ; Juhasz, T. ; Mourou, G.

Author_Institution

Center for Ultrafast Opt. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

511

Abstract

Summary form only given. Data are presented that demonstrate electron production by avalanche ionization as the dominant mechanism for laser breakdown, and subsequent surface damage in silicon, for laser pulse durations in the range of 80 fs to 9 ns. Experiments are performed at 786 nm and 1.06 /spl mu/m exhibiting the correct wavelength dependence for an avalanche process.

Keywords

avalanche breakdown; electron production; high-speed optical techniques; photoionisation; plasma production by laser; silicon; 1.06 mum; 786 nm; 80 fs to 9 ns; Si; avalanche ionization; avalanche process; correct wavelength dependence; dielectric breakdown; dominant mechanism; electron production; laser breakdown; laser pulse durations; silicon; surface damage; ultrafast laser pulse irradiation; Dielectric breakdown; Ionization; Laser ablation; Laser theory; Machining; Optical pulses; Optical scattering; Silicon; Surface emitting lasers; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676562

Filename

676562