A new high gain low voltage 1.45 GHz CMOS mixer

Author

Liu, Lu ; Wang, ZhiHua

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2005

fDate

23-26 May 2005

Firstpage

5023

Abstract

A new architecture of CMOS downconversion mixer for low voltage and high gain communication applications is proposed. This topology avoids the stacking of transistors between the power and ground lines, thus it can work on a low supply voltage. It does not need inductors, so it is relatively easy to fabricate. This mixer is implemented using a 0.25 μm CMOS technology with supply voltage of 2 V. With 1.452 GHz LO input and 1.45 GHz RF input, simulation result show that the conversion gain is 15 dB, IIP3 is -4.5 dBm, noise figure is 17 dB, the maximum transient power dissipation is 9.3 mW and DC power dissipation is 9.2 mW. The mixer´s noise and linearity analyses are also presented.

Keywords

CMOS analogue integrated circuits; UHF mixers; frequency convertors; integrated circuit design; integrated circuit noise; low-power electronics; network analysis; network topology; power consumption; random noise; 0.25 micron; 1.45 GHz; 1.452 GHz; 15 dB; 17 dB; 2 V; 9.2 mW; communication applications; downconversion mixer; high gain mixer; inductors; low voltage CMOS mixer; transistor stacking; CMOS technology; Gain; Inductors; Linearity; Low voltage; Noise figure; Power dissipation; Radio frequency; Stacking; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465762

Filename

1465762