• DocumentCode
    3547620
  • Title

    A memory controller that reduces latency of cached SDRAM

  • Author

    Miura, Seiji ; Akiyama, Satoru

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    5250
  • Abstract
    The proposed controller has two main control schemes, address-alignment control and dummy-cache control. These two schemes cooperatively control cached SDRAM to reduce its latency. Testing of the controller using benchmark programs demonstrated that latency was reduced 25% and execution time was reduced 13% compared to those of a sense-amplifier cache controller for standard SDRAM. The proposed controller requires 9.2 Kgates at a supply voltage of 1.8 V and an operating frequency of 133 MHz.
  • Keywords
    DRAM chips; cache storage; integrated circuit design; 1.8 V; 133 MHz; address-alignment control; benchmark programs; cached SDRAM latency reduction; dummy-cache control; memory controller; sense-amplifier cache controller; standard SDRAM; synchronous DRAM; Benchmark testing; Cache memory; Centralized control; Delay; Frequency; Laboratories; Operational amplifiers; Random access memory; SDRAM; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465819
  • Filename
    1465819