A read-out strategy and circuit design for high frequency MEMS resonators

Author

Uranga, Arantxa ; Barniol, Nuria ; Campanella, Humberto ; Esteve, Jaume ; Terés, Lluis ; Davis, Zachary

Author_Institution

Electron. Eng. Dept., Univ. Autonoma de Barcelona, Spain

fYear

2005

fDate

23-26 May 2005

Firstpage

5361

Abstract

This paper describes the implementation of read-out circuitry to characterize a MEMS resonator in the UHF band. A read-out strategy is proposed and explained, detailing the requirement issues. Also, the circuit architecture and design are presented. SPECTRE modeling predictions are compared with current characterization results. A transimpedance gain of 70 dB has been verified, with a cut-off frequency of 450 MHz.

Keywords

CMOS integrated circuits; UHF devices; micromechanical resonators; readout electronics; 450 MHz; 70 dB; CMOS read-out circuitry; MEMS current characterization; UHF band resonators; high frequency MEMS resonators; read-out circuit; read-out strategy; resonator cut-off frequency; transimpedance amplifier; transimpedance gain; Bandwidth; Circuit synthesis; Impedance; Integrated circuit modeling; Micromechanical devices; Radiofrequency amplifiers; Resonant frequency; UHF circuits; VHF circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465847

Filename

1465847

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3547650