DocumentCode
3547725
Title
Design of MOS current mode logic gates - computing the limits of voltage swing and bias current
Author
Caruso, Giuseppe
Author_Institution
Dipt. di Ingegneria Elettrica, Palermo Univ., Italy
fYear
2005
fDate
23-26 May 2005
Firstpage
5637
Abstract
Minimizing a quality metric for an MCML gate, such as power-delay product or energy-delay product, requires solving a system of nonlinear equations subject to constraints on both bias current and voltage swing. In this paper, we show that the limits of the swing and the bias current are affected by the constraints on maximum area and maximum delay. Moreover, methods for computing such limits are presented.
Keywords
MOS logic circuits; current-mode logic; logic design; logic gates; nonlinear equations; MCML gate; MOS current mode logic gates; bias current; energy-delay product; maximum area; maximum delay; nonlinear equations; power-delay product; quality metric; voltage swing; CMOS logic circuits; Crosstalk; Delay; Logic design; Logic gates; Nonlinear equations; Parasitic capacitance; Power dissipation; Voltage; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465916
Filename
1465916
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