Mid-wave infrared lasers employing GaInSb/InAs superlattice active regions

Summary form only given. We report significant improvements in the performance of laser diodes based on semiconductor superlattices, arising from improved extrinsic materials properties and better laser design. Active layers are multiple quantum wells consisting of thin GaInSb-InAs superlattice quantum wells interleaved between GaInAsSb barrier layers. This design was chosen to remove the constraint of lattice match between the GaInSb-InAs superlattices and the substrate, allowing structures with superior intrinsic characteristics to be employed.