Title :
Ultrafast response times and enhanced optical nonlinearity in beryllium-doped low-temperature-grown GaAs
Author :
Prasad, Athul ; Haiml, M. ; Jung, I.D. ; Kunde, J. ; Morier-Genoud, Francois ; Weber, E.R. ; Stegner, U. ; Keller, Ulrich
Author_Institution :
Inst. of Quantum Electron., Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Summary form only given. We demonstrate that beryllium doping of low temperature-grown (LT) GaAs considerably shortens the initial decay time of the nonlinear absorption to values of about 100 fs. Be doping of LT GaAs improves the time response, the absorption modulation, and the nonsaturable losses.
Keywords :
III-V semiconductors; beryllium; gallium arsenide; high-speed optical techniques; optical losses; optical materials; optical saturable absorption; optical switches; 100 fs; GaAs:Be; absorption modulation; beryllium doping; beryllium-doped low-temperature-grown GaAs; enhanced optical nonlinearity; initial decay time; low temperature-grown GaAs; nonlinear absorption; nonsaturable losses; time response; ultrafast response times; Absorption; Delay; Doping; Energy measurement; Gallium arsenide; Plasmons; Reflectivity; Time factors; Tunneling; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676597
