Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

Author

Yousef, K. ; Jia, Hongjie ; Pokharel, R. ; Allam, A. ; Ragab, M. ; Kanaya, Haruichi ; Yoshida, Kenta

Author_Institution

Electron. & Commun. Eng. Dept., Egypt-Japan Univ. of Sci. & Technol., Alex, Egypt

fYear

2013

fDate

17-19 Dec. 2013

Firstpage

68

Lastpage

70

Abstract

This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

Keywords

CMOS analogue integrated circuits; impedance matching; integrated circuit design; low noise amplifiers; low-power electronics; ultra wideband technology; wideband amplifiers; UWB LNA; common gate stage; common source stage; current reuse topology; gain 14 dB; impedance matching; low-power low-voltage CMOS ultrawideband low noise amplifier; noise figure 3.0 dB; portable device; power 2.0 mW; size 0.18 mum; voltage 0.9 V; CMOS integrated circuits; Gain; Impedance; Impedance matching; Low-noise amplifiers; Simulation; Ultra wideband technology; Current Reuse topology; Low Noise Amplifier (LNA); Ultra wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Computers (JEC-ECC), 2013 Japan-Egypt International Conference on

Conference_Location

6th of October City

Type

conf

DOI

10.1109/JEC-ECC.2013.6766387

Filename

6766387