Title :
Development of 2.2-/spl mu/m InGaAs photodetectors using molecular beam epitaxy
Author :
Kochhar, R. ; Hwang, W.-Y. ; Micovic, M. ; Mayer, Theresa S. ; Miller, Douglas L. ; Lord, S.M.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Summary form only given. Operation of photodetectors in the near infrared (1.0-3.0 /spl mu/m) has become increasingly important for a variety of applications. Significant improvements in the performance of these systems can be obtained by integrating these photodetectors in large scale linear and 2-D focal plane arrays (FPAs). InGaAs on InP as photodetector was used. Growth was by molecular beam epitaxy.
Keywords :
focal planes; indium compounds; infrared detectors; integrated optics; molecular beam epitaxial growth; photodetectors; semiconductor growth; /spl mu/m InGaAs photodetectors; 1 to 3 mum; InGaAs; large scale linear 2D focal plane arrays; molecular beam epitaxial growth; molecular beam epitaxy; near infrared; photodetectors; Bandwidth; Detectors; Frequency; Indium gallium arsenide; Laser radar; Laser tuning; Molecular beam epitaxial growth; Optical mixing; Optical receivers; Photodetectors;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
