DocumentCode
354845
Title
High-efficiency photorefractive p-i-n quantum well diodes
Author
Lahiri, I. ; Nolte, David D. ; Aguilar, Mario ; Melloch, M.R.
Author_Institution
Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
fYear
1996
fDate
2-7 June 1996
Firstpage
213
Lastpage
214
Abstract
Summary form only given. We present a new, highly-efficient, all-semiconductor photorefractive AlGaAs quantum well design in which all the defects have been removed from the cladding layers. Output diffraction efficiencies approaching 40% have been achieved in this design, an order of magnitude greater than demonstrated in all previous designs.
Keywords
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; light diffraction; optical design techniques; p-i-n photodiodes; photorefractive materials; semiconductor quantum wells; AlGaAs; all-semiconductor photorefractive AlGaAs quantum well design; cladding layers; high-efficiency photorefractive p-i-n quantum well diodes; output diffraction efficiencies; photodiodes; Diffraction; Glass; Gratings; P-i-n diodes; PIN photodiodes; Photorefractive effect; Physics; Pulse modulation; Spatial resolution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864578
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