Resonant cavity photodetectors in silicon-on-insulator

Author

Pezeshki, B. ; Kuchta, D.M. ; Welser, J.J. ; Kash, J.A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

221

Lastpage

222

Abstract

Summary form only given. Presently GaAs metal semiconductor metal (MSM) photodetectors are used for most optical data link systems operating at about 780-850 nm. The MSMs are generally preferred over p-i-n structures due to their low capacitance per unit area. To compare the effect of different substrates for MSM detectors, identical 80 micron-diameter devices were fabricated both on Si and Si-on-insulator (SOI).

Keywords

VLSI; capacitance; gallium arsenide; infrared detectors; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; optical resonators; photodetectors; silicon-on-insulator; 780 to 850 nm; GaAs; GaAs MSM photodetectors; GaAs metal semiconductor metal photodetectors; Si; low capacitance; micron-diameter devices; optical data link systems; resonant cavity photodetectors; silicon-on-insulator; substrates; Detectors; Fingers; High speed optical techniques; Optical fibers; Optical receivers; Packaging; Photoconductivity; Photodetectors; Resonance; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864588