DocumentCode :
3548571
Title :
Progress on epitaxial GaAs detectors
Author :
Sun, G.C. ; Rao, R. ; Mañez, N. ; Bourgoin, J.C. ; Smith, K.M. ; Quarati, F. ; Al-Ajili, A.
Author_Institution :
Lab. des Milieux Desordonnes et Heterogenes, CNRS, Paris
Volume :
7
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
4273
Lastpage :
4277
Abstract :
We first show that GaAs is the material which should be used for X-ray medical imaging. Indeed, for materials characterized by larger atomic numbers, the requested spatial resolution will not be sufficient owing to the energy of the fluorescence photon which becomes too high. We then describe the performances we obtained with detectors made of thick epitaxial GaAs layers in medical conditions, in order to illustrate that such detector qualify for medical imaging
Keywords :
X-ray imaging; biomedical imaging; semiconductor counters; GaAs detectors; X-ray medical imaging; atomic numbers; fluorescence photon; spatial resolution; thick epitaxial GaAs layers; Absorption; Biomedical equipment; Biomedical imaging; Detectors; Electrons; Fluorescence; Gallium arsenide; Medical services; Spatial resolution; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1466834
Filename :
1466834
Link To Document :
بازگشت