Title :
Si/CdTe semiconductor compton camera
Author :
Watanabe, S. ; Nakazawa, K. ; Takashima, T. ; Tanaka, T. ; Mitani, T. ; Oonuki, K. ; Takahashi, T. ; Tajima, H. ; Fukazawa, Y. ; Nomachi, M. ; Kubo, Satoshi ; Onishi, M. ; Kuroda, Y.
Author_Institution :
Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Kanagawa
Abstract :
We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six stacked double-sided Si strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 80 keV to 662 keV. The energy resolution (FWHM) is 10 keV and 16 keV at 356 keV and 511 keV, respectively
Keywords :
cameras; gamma-ray detection; image reconstruction; nuclear electronics; position sensitive particle detectors; silicon radiation detectors; CdTe pixel detectors; CdTe semiconductor imaging devices; Compton camera; Compton reconstructed images; Si semiconductor; VA32TA; analog ASIC; gamma-ray spectra; high energy resolution; stacked double-sided Si strip detectors; Cameras; Decision support systems; Electromagnetic wave absorption; Energy resolution; Gamma ray detection; Gamma ray detectors; Image reconstruction; Prototypes; Scattering; Strips;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1466837
