Si/CdTe semiconductor compton camera

Author

Watanabe, S. ; Nakazawa, K. ; Takashima, T. ; Tanaka, T. ; Mitani, T. ; Oonuki, K. ; Takahashi, T. ; Tajima, H. ; Fukazawa, Y. ; Nomachi, M. ; Kubo, Satoshi ; Onishi, M. ; Kuroda, Y.

Author_Institution

Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Kanagawa

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4286

Lastpage

4290

Abstract

We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six stacked double-sided Si strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 80 keV to 662 keV. The energy resolution (FWHM) is 10 keV and 16 keV at 356 keV and 511 keV, respectively

Keywords

cameras; gamma-ray detection; image reconstruction; nuclear electronics; position sensitive particle detectors; silicon radiation detectors; CdTe pixel detectors; CdTe semiconductor imaging devices; Compton camera; Compton reconstructed images; Si semiconductor; VA32TA; analog ASIC; gamma-ray spectra; high energy resolution; stacked double-sided Si strip detectors; Cameras; Decision support systems; Electromagnetic wave absorption; Energy resolution; Gamma ray detection; Gamma ray detectors; Image reconstruction; Prototypes; Scattering; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466837

Filename

1466837