DocumentCode :
3548589
Title :
3D position sensitive CdZnTe spectrometer performance using third generation VAS/TAT readout electronics
Author :
Zhang, Feng ; He, Zhong ; Knoll, Glenn F. ; Wehe, David K. ; Berry, James E.
Author_Institution :
Dept. of Nucl. Eng., Michigan Univ., Ann Arbor, MI
Volume :
7
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
4355
Lastpage :
4359
Abstract :
Three-dimensional position-sensitive CdZnTe (CZT) gamma-ray spectrometers employing new VAS3.1/TAT3 ASIC readouts were developed and tested. Each spectrometer is a 1.5times1.5times1 cm3 CdZnTe crystal with 11 by 11 pixelIated anodes wire-bonded to the readout electronics using an intermediate ceramic substrate with plate-through-via. The signals from the anode pixels and the cathode were all read out through these ASICs. The pixel position provides the lateral coordinates of the interaction, while the cathode to anode signal ratio and the electron drift time are used to obtain the interaction depth. Using the 3-D position information, the variation in weighting potential, electron trapping and material non-uniformity can be accounted for to the scale of the position resolution, ~1.27 mmtimes1.27 mmtimes0.2 mm. The new VAS3.1/TAT3 ASIC has less gain and baseline drift, lower cross-talk noise, more uniform thresholds, better linearity and better timing resolution than our previous VAS2/TAT2 system. For example, the 32 keV K X-ray from a 137Cs source was observed for the first time. Two 3-D CZT spectrometers were tested and both achieved better than 1% FWHM energy resolution (at 662 keV, room temperature operation, with an uncollimated source) for single-pixel events. The experimental results for these two 3-D CZT spectrometer systems are presented and discussed
Keywords :
gamma-ray spectrometers; position sensitive particle detectors; readout electronics; semiconductor counters; 1 cm; 1.5 cm; 293 to 298 K; 32 keV; 3D position sensitive CdZnTe gamma-ray spectrometer; 137Cs source; ASIC readouts; CdZnTe crystal; VAS/TAT readout electronics; anode pixels; cathode; ceramic substrate; electron drift time; electron trapping; energy resolution; room temperature operation; timing resolution; Anodes; Application specific integrated circuits; Cathodes; Ceramics; Electron traps; Energy resolution; Readout electronics; Signal resolution; Spectroscopy; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1466851
Filename :
1466851
Link To Document :
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