Title :
The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film
Author :
Park, Y.J. ; Na, Y.H. ; Kim, S.U. ; Kim, Ki Hyun ; Jung, T.R.
Author_Institution :
Dept. of Appl. Phys., Korea Univ., Seoul
Abstract :
Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resistivity (5times10 9 Omegamiddotcm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl: 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350~500 degC. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.
Keywords :
II-VI semiconductors; cadmium compounds; chlorine; electrical resistivity; grain size; graphite; semiconductor doping; semiconductor growth; CdZnTe:Cl; Cl-doped polycrystalline CdZnTe thick film growth; grain size; polished graphite substrate; thermal evaporation method; Conductivity; Grain size; Helium; Leakage current; Radiation detectors; Substrates; Temperature measurement; Thick films; X-ray imaging; X-ray scattering;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1466866
