DocumentCode :
3548619
Title :
A method to study uniformity of electric properties of high-resistance CdZnTe crystals
Author :
Komar, V.K. ; Chugai, O.N. ; Abashin, S.L. ; Nalivaiko, D.P. ; Puzikov, V.M. ; Sulima, S.V.
Author_Institution :
Inst. for Single Crystals, NAS, Kharkov, Ukraine
Volume :
7
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
4481
Abstract :
The paper discusses about the electric properties of high-resistance CdZnTe crystals. The suggested method detects large-scale irregularities of various origins in high-resistance semiconductors. Grain boundaries and high-conductivity regions are easily revealed in Cd1-xZnxTe crystals. It was found that certain electric irregularities invisible by transmitted IR light are attributed to intrinsic structural defects.
Keywords :
II-VI semiconductors; cadmium compounds; electrical conductivity; electrical resistivity; grain boundaries; wide band gap semiconductors; zinc compounds; Cd1-xZnxTe; electric properties; grain boundaries; high-conductivity crystals; high-resistance semiconductor crystals; intrinsic structural defects; large-scale irregularities; transmitted IR light; Crystallization; Crystals; Dielectric measurements; Electric variables measurement; Frequency measurement; Large-scale systems; Magnetic field measurement; Magnetic properties; Performance evaluation; Radiation detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1466880
Filename :
1466880
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3548619
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