• DocumentCode
    3548619
  • Title

    A method to study uniformity of electric properties of high-resistance CdZnTe crystals

  • Author

    Komar, V.K. ; Chugai, O.N. ; Abashin, S.L. ; Nalivaiko, D.P. ; Puzikov, V.M. ; Sulima, S.V.

  • Author_Institution
    Inst. for Single Crystals, NAS, Kharkov, Ukraine
  • Volume
    7
  • fYear
    2004
  • fDate
    16-22 Oct. 2004
  • Firstpage
    4481
  • Abstract
    The paper discusses about the electric properties of high-resistance CdZnTe crystals. The suggested method detects large-scale irregularities of various origins in high-resistance semiconductors. Grain boundaries and high-conductivity regions are easily revealed in Cd1-xZnxTe crystals. It was found that certain electric irregularities invisible by transmitted IR light are attributed to intrinsic structural defects.
  • Keywords
    II-VI semiconductors; cadmium compounds; electrical conductivity; electrical resistivity; grain boundaries; wide band gap semiconductors; zinc compounds; Cd1-xZnxTe; electric properties; grain boundaries; high-conductivity crystals; high-resistance semiconductor crystals; intrinsic structural defects; large-scale irregularities; transmitted IR light; Crystallization; Crystals; Dielectric measurements; Electric variables measurement; Frequency measurement; Large-scale systems; Magnetic field measurement; Magnetic properties; Performance evaluation; Radiation detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2004 IEEE
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-8700-7
  • Electronic_ISBN
    1082-3654
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2004.1466880
  • Filename
    1466880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3548619