Title :
Suppress of leakage current in polycrystalline CdZnTe X-ray detectors
Author :
Kim, K.H. ; Na, Y.H. ; Park, Y.J. ; Jung, T.R. ; Kim, S.U.
Author_Institution :
DXM, Gyunggido, South Korea
Abstract :
The polycrystalline CdZnTe thick films which has high resistivity about 5×109 Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of polycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Schottky barrier diodes exhibits low leakage current (14 nA/cm2) and high barrier height (φb=0.798 eV).
Keywords :
II-VI semiconductors; Schottky barriers; Schottky diodes; X-ray detection; cadmium compounds; electrical resistivity; etching; heat treatment; indium; leakage currents; semiconductor thin films; zinc compounds; In-CdZnTe; In/poly-CdZnTe Schottky barrier diodes; Schottky barrier; barrier height; blocking layers; chemical etching; leakage current suppressing; polycrystalline CdZnTe X-ray detectors; polycrystalline CdZnTe thick films; resistivity; stoichiometric surface; thermal evaporation method; thermal treatment; Chemicals; Conductivity; Etching; Leakage current; Schottky barriers; Schottky diodes; Surface treatment; Thermal resistance; Thick films; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1466886
