DocumentCode :
3548626
Title :
Characterization of Sb2Te3 ohmic contacts on p-type CdTe single crystals
Author :
Zappettini, Andrea ; Bissoli, Francesco ; Gombia, Enos ; Bosio, Alessio ; Romeo, Nicola
Author_Institution :
IMEM-CNR, Parma, Italy
Volume :
7
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
4518
Abstract :
The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time.
Keywords :
II-VI semiconductors; annealing; antimony compounds; cadmium compounds; electrical resistivity; ohmic contacts; Sb2Te3-CdTe; annealing temperatures; electrical characteristics; ohmic contacts; p-type CdTe single crystals; resistivity; Annealing; Conductivity; Contact resistance; Crystals; Ohmic contacts; Photovoltaic cells; Sputtering; Telephony; Tellurium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1466887
Filename :
1466887
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3548626
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