Title :
Study of dark current blocking layer for BiI3 X-ray detector film
Author :
Ikeda, M. ; Oka, T. ; Mori, K. ; Atsuta, M.
Author_Institution :
Adv. Electron Devices Lab., Corporate Res. & Dev. Center, Kawasaki, Japan
Abstract :
A blocking layer to decrease the dark current of BiI3 X-ray detector was studied by depositing BiOI film on BiI3 film. The quality of the BiI3 film was evaluated by X-ray diffraction and photoluminescence. The carrier transport characteristics were evaluated by Hall measurement. The BiI3 film was n-type and the BiOI film was p-type. The BiI3/BiOI film exhibited a rectifying current-voltage characteristics, indicating p-n junction formation between BiI3 and BiOI films. The dark current decreased by two orders of magnitude in the reverse bias. The effective resistivity increased from 1×109 to 1×1011 Ωcm using the blocking layer. The response time to X-ray pulse was less than 33 ms and the sensitivity value was considered to be promising. A BiI3- BiOI junction band profile was estimated using the Hall measurement data.
Keywords :
Hall mobility; X-ray detection; X-ray diffraction; bismuth compounds; dark conductivity; electrical resistivity; insulating thin films; photoluminescence; BiI3; BiOI; Hall measurement; X-ray diffraction; X-ray pulse; carrier transport characteristics; current-voltage characteristics; dark current blocking layer; n-type BiI3 X-ray detector film; p-n junction formation; p-type BiOI film; photoluminescence; resistivity; reverse bias; Bismuth; Conductivity; Dark current; Inspection; Medical diagnosis; P-n junctions; Radiation detectors; Spatial resolution; X-ray detectors; X-ray imaging;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1466888
