DocumentCode :
3548642
Title :
The fast neutron response of silicon carbide semiconductor radiation detectors
Author :
Ruddy, Frank H. ; Dulloo, Abdul R. ; Seidel, John G. ; Das, Mrinal K. ; Ryu, Sei-Hyung ; Agarwal, Anant K.
Author_Institution :
Dept. of Sci. & Technol., Westinghouse Electr. Corp., Pittsburgh, PA, USA
Volume :
7
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
4575
Abstract :
Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n,α1) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n,α0) and 28Si(n,α1) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.
Keywords :
neutron detection; neutron-nucleus reactions; silicon radiation detectors; 12C(n,alpha0); 25Mg; 28Si(n,alpha1); energy spectrometry; fast neutron response measurements; fission neutron yields; fusion neutron fields; large-volume SiC p-i-n diodes; multiple reaction peaks; pulse height defect differences; silicon carbide semiconductor radiation detectors; Gamma ray detection; Gamma ray detectors; Neutrons; Radiation detectors; Schottky diodes; Semiconductor radiation detectors; Silicon carbide; Silicon radiation detectors; Spectroscopy; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1466901
Filename :
1466901
Link To Document :
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