Polarization dependence of the electroabsorption in ordered GaInP

Author

Kiesel, P. ; Schmiedel, G. ; Greger, E. ; Gulden, K.H. ; Moser, Michael ; Dohler, Gottfried H.

Author_Institution

Inst. fur Tech. Phys., Erlangen-Nurnberg Univ., Germany

fYear

1996

fDate

2-7 June 1996

Firstpage

299

Abstract

Summary form only given GaInP-AlGaInP is a very promising material for optoelectronic components for the visible spectral range down to 630 nm. Depending on the growth parameter MOVPE-grown AlGaInP alloys (lattice matched to GaAs substrate) show a self ordering in form of a GaP-InP superlattice along the [111] directions. This implies significant changes of the band structure and the optical and electrical properties. We have studied the polarization dependence of the electroabsorption (Franz-Keldysh effect) in AlGaInP-GaInP p-i-n double-hetero structures.

Keywords

III-V semiconductors; aluminium compounds; electroabsorption; gallium compounds; indium compounds; light polarisation; optoelectronic devices; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; visible spectra; 630 nm; AlGaInP-GaInP p-i-n double-hetero structures; Franz-Keldysh effect; GaAs; GaAs substrate; GaInP-AlGaInP; GaP-InP superlattice; MOVPE-grown AlGaInP alloys; [111] directions; band structure; electrical properties; electroabsorption; growth parameter; lattice matched; optical properties; optoelectronic components; ordered GaInP; polarization dependence; visible spectral range; Absorption; Electrons; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Microcavities; Optical polarization; PIN photodiodes; Photoconductivity; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864701