ESD protection structure with embedded high-voltage p-type SCR for automotive vacuum-fluorescent-display (VFD) applications

Author

Ker, Ming-Dou ; Chang, Wei-Jen ; Yang, Marcus ; Chen, Cheng-Chung ; Chan, Mu-Chin ; Shieh, Wuu-Trong ; Yen, Kuo-Lung

Author_Institution

Inst. of Electron., National Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2005

fDate

27 June-1 July 2005

Firstpage

67

Lastpage

70

Abstract

An ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

Keywords

MOS integrated circuits; automotive electronics; display devices; driver circuits; electrostatic discharge; thyristors; ESD protection; HBM ESD stress; PMOS device; automotive electronics applications; automotive vacuum-fluorescent-display applications; electrostatic discharge; high-voltage p-type SCR; silicon controlled rectifier; vacuum-fluorescent-display driver IC; Application specific integrated circuits; Automotive electronics; Automotive engineering; Driver circuits; Electrostatic discharge; MOS devices; Mass production; Protection; Robustness; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469133

Filename

1469133