Title :
ESD protection structure with embedded high-voltage p-type SCR for automotive vacuum-fluorescent-display (VFD) applications
Author :
Ker, Ming-Dou ; Chang, Wei-Jen ; Yang, Marcus ; Chen, Cheng-Chung ; Chan, Mu-Chin ; Shieh, Wuu-Trong ; Yen, Kuo-Lung
Author_Institution :
Inst. of Electron., National Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
27 June-1 July 2005
Abstract :
An ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.
Keywords :
MOS integrated circuits; automotive electronics; display devices; driver circuits; electrostatic discharge; thyristors; ESD protection; HBM ESD stress; PMOS device; automotive electronics applications; automotive vacuum-fluorescent-display applications; electrostatic discharge; high-voltage p-type SCR; silicon controlled rectifier; vacuum-fluorescent-display driver IC; Application specific integrated circuits; Automotive electronics; Automotive engineering; Driver circuits; Electrostatic discharge; MOS devices; Mass production; Protection; Robustness; Thyristors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469133
