RC-triggered PNP and NPN simultaneously switched silicon controlled rectifier ESD networks for sub-0.18μm technology

Author

Tan, Pee-Ya ; Indrajit, Manna ; Li, Pian-Hong ; Voldman, Steven H.

Author_Institution

Chartered Semicond. Mfg. Ltd., Singapore

fYear

2005

fDate

27 June-1 July 2005

Firstpage

71

Lastpage

75

Abstract

Silicon controlled rectifiers (SCRs) have superior ESD performance and are expected to play a major role in sub-μm technologies replacing MOSFET-based ESD networks due to MOSFET dielectric scaling. In this paper, novel polysilicon-bound SCR-based clamp circuit is explored that provide simultaneous triggering of NPN and PNP bipolar transistors by means of RC discriminator network and a triggering circuit stages coupled into the regenerative feedback loop of the SCR. This network demonstrates good ESD performance, low on-resistance, high I_t2 and low holding voltage.

Keywords

RC circuits; bipolar transistors; discriminators; electrostatic discharge; thyristors; trigger circuits; 0.18 micron; ESD network; MOSFET dielectric scaling; NPN bipolar transistor; PNP bipolar transistor; RC discriminator network; SCR-based clamp circuit; electrostatic discharge; regenerative feedback loop; silicon controlled rectifier; sub-μm technology; triggering circuit; Bipolar transistors; Clamps; Coupling circuits; Dielectrics; Electrostatic discharge; Feedback circuits; Feedback loop; Low voltage; MOSFET circuits; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469134

Filename

1469134