DocumentCode
3549714
Title
2D junction delineation for the failure analysis of silicon carbide devices
Author
Buzzo, Marco ; Ciappa, Mauro ; Fichtner, Wolfgang
Author_Institution
Infineon Technol., Villach, Austria
fYear
2005
fDate
27 June-1 July 2005
Firstpage
105
Lastpage
109
Abstract
In this work the 2D dopant profile of a p+n-junction as measured with SCM is compared with the potential contrast maps obtained by scanning electron microscopy (SEM). Two samples prepared by cleaving and by polishing are investigated to quantify the impact of the surface roughness on the accuracy in delineating the junction location.
Keywords
doping profiles; failure analysis; p-n junctions; scanning electron microscopy; semiconductor device testing; silicon compounds; surface roughness; wide band gap semiconductors; 2D dopant profile; 2D junction delineation; SiC; failure analysis; junction location; p+n-junction; potential contrast maps; scanning capacitance microscopy; scanning electron microscopy; silicon carbide device; surface roughness; Aluminum; Atomic force microscopy; Electron emission; Failure analysis; Nitrogen; Optical films; Rough surfaces; Scanning electron microscopy; Silicon carbide; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN
0-7803-9301-5
Type
conf
DOI
10.1109/IPFA.2005.1469140
Filename
1469140
Link To Document