• DocumentCode
    3549717
  • Title

    FIB etching of Cu with minimal impact on neighboring circuitry, including dielectric

  • Author

    Ng, Kelly ; Motegi, S. ; Jain, R.K. ; Lundquist, T.R. ; Makarov, VV

  • Author_Institution
    Credence Syst., Milpitas, CA, USA
  • fYear
    2005
  • fDate
    27 June-1 July 2005
  • Firstpage
    118
  • Lastpage
    122
  • Abstract
    The purpose of this paper is to report on success in FIB editing devices with interconnects of copper, SiO2 and low-k dielectrics. Our approach is based on using a FIB activated chemistry to decrease decomposition of dielectric as well as bind-up redeposited copper in a non-conducting state.
  • Keywords
    copper; dielectric materials; focused ion beam technology; integrated circuit interconnections; silicon compounds; sputter etching; Cu; Cu interconnect; FIB activated chemistry; FIB etching; SiO2; dielectric decomposition; focused ion beam technology; low-k dielectrics; nonconducting state; redeposited copper; Aluminum; Chemicals; Chemistry; Copper; Dielectric devices; Integrated circuit interconnections; Ion beams; Milling; Protection; Sputter etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
  • Print_ISBN
    0-7803-9301-5
  • Type

    conf

  • DOI
    10.1109/IPFA.2005.1469143
  • Filename
    1469143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3549717