Title :
Thermal stability of SiGe dynamic threshold pMOSFET
Author :
Liao, W.M. ; Shih, C.F. ; Li, P.W.
Author_Institution :
Dept. of Electr. Eng., National Central Univ., Chungli, Taiwan
fDate :
27 June-1 July 2005
Abstract :
In this paper, we have systematically investigated the temperature stability of strained SiGe and bulk Si p-MOSFETs operated in dynamic-threshold (DT) mode and standard mode, respectively in terms of drive current, threshold voltage (Vth), subthreshold swing (SS), body factor (γ), off-state leakage, and low frequency noise (LFN). The basic physical mechanisms for the temperature dependence of SiGe DT- and standard-MOSFETs are explained based on experimental observations. The comparison with the bulk Si counterpart devices over the whole temperature range is also reported.
Keywords :
Ge-Si alloys; MOSFET; thermal stability; SiGe; body factor; dynamic threshold mode; low frequency noise; off-state leakage; pMOSFET; strained SiGe; subthreshold swing; temperature dependence; thermal stability; threshold voltage; Germanium silicon alloys; Low-frequency noise; MOSFET circuits; Performance analysis; Signal analysis; Silicon germanium; Substrates; Temperature dependence; Thermal stability; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469147
