Title :
Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides
Author :
Miranda, Enrique ; Ortiz-Conde, A. ; ánchez, F. J García ; Farkas, E.
Author_Institution :
Dept. d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Bellaterra, Spain
fDate :
27 June-1 July 2005
Abstract :
Modeling of the post-breakdown current in MOS devices is receiving considerable attention in the last years because of the ever decreasing reliability margins of the gate insulators as a consequence of the ongoing miniaturization trends. In this work, we explore a compact representation for this current after a hard breakdown event suitable for circuit simulation environments. The model is based on a diode-like equation with series resistance. Accurate parameters extraction is accomplished by means of the integral difference function (IDF) method using the exact expression for the current-voltage (I-V) characteristic.
Keywords :
MIS devices; circuit simulation; difference equations; integral equations; semiconductor device breakdown; semiconductor device models; I-V characteristic; MOS device; circuit simulation; current voltage characteristic; diode-like equation; gate insulator; hard breakdown; integral difference function; parameter extraction; post-breakdown current; series resistance; ultrathin gate oxide; Circuit simulation; Dielectric breakdown; Electric breakdown; Electrons; Integral equations; MOS devices; Parameter extraction; Semiconductor diodes; Stress; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469150
