Title :
Trapping and detrapping kinetics in metal gate/HfO2 stacks
Author :
Mitard, J. ; Leroux, C. ; Ghibaudo, G. ; Reimbold, G. ; Garros, X. ; Guillaumot, B. ; Boulanger, F.
Author_Institution :
CEA-LETI, Grenoble, France
fDate :
27 June-1 July 2005
Abstract :
In this work, we study the trapping and detrapping kinetics over a large range of temperature from 20K to 500K with an appropriate methodology. Through the experimental work, we report, for the first time, the importance of the direct tunneling (especially Shockley-Read-Hall (SRH-like)) mechanism for all operational conditions.
Keywords :
dielectric materials; electric breakdown; hafnium compounds; tunnelling; 20 to 500 K; HfO2; Shockley-Read-Hall mechanism; detrapping kinetics; direct tunneling; metal gate stacks; trapping kinetics; Dielectric materials; Hafnium oxide; Hysteresis; Kinetic theory; Leakage current; Silicon; Temperature dependence; Temperature distribution; Threshold voltage; Tin;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469151
