Title :
The application of HAADF-STEM in SiGe materials
Author :
Du, Anyan Y. ; Tang, L.J. ; Wang, Y.H. ; Cheng, C.K.
Author_Institution :
Inst. of Microelectron., Singapore
fDate :
27 June-1 July 2005
Abstract :
In this paper, the HAADF-STEM and TEM are used to study the SiGe materials. The advantage of HAADF-STEM in analysis the grading SiGe materials with high contrast for 2% Ge different layers. It is also provide clean images of the dislocations in the SiGe grading layers.
Keywords :
Ge-Si alloys; materials testing; scanning-transmission electron microscopy; transmission electron microscopy; SiGe; SiGe materials; dislocations; grading layers; high-angle annular-dark field; scanning transmission electron microscopy; Atomic layer deposition; Capacitive sensors; Germanium silicon alloys; Image edge detection; Inspection; Lattices; Microelectronics; Oxidation; Signal detection; Silicon germanium;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469152
